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| savantic semiconductor product specification silicon pnp power transistors 2SB555 2sb556 description with to-3 package complement to type 2sd425/426 high power dissipation applications power amplifier applications recommended for high-power high-fidelity audio frequency amplifier output stage pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2SB555 -140 v cbo collector-base voltage 2sb556 open emitter -120 v 2SB555 -140 v ceo collector-emitter voltage 2sb556 open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current -12 a i e emitter current 12 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB555 2sb556 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SB555 -140 v (br)ceo collector-emitter breakdown voltage 2sb556 i c =-0.1a ;i b =0 -120 v v (br)ebo emitter-base breakdown voltage i e =-10ma ;i c =0 -5 v 2SB555 i c =-7a; i b =-0.7a v cesat collector-emitter saturation voltage 2sb556 i c =-6a; i b =-0.6a -3.0 v v be base-emitter on voltage i c =-7a ; v ce =-5v -2.5 v i cbo collector cut-off current v cb =-50v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe dc current gain i c =-2a ; v ce =-5v 40 140 c ob output capacitance i e =0 ; v cb =-10v; f=1.0mhz 330 pf f t transition frequency i c =-2a ; v ce =-5v 6 mhz savantic semiconductor product specification 3 silicon pnp power transistors 2SB555 2sb556 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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